EU Projects

GoFarUV - Project progress No.1
Preparation of the sputtering system for reactive dual-magnetron deposition using gallium (Ga) and aluminium (Al) in simultaneous DC, RF, and HiPIMS configuration: setup and verification of the vacuum system, gas supply system, sample heating system, target cooling and heating systems, and establishment of the necessary power supply connections for dual-magnetron operation. First reactive Ga and Al co-sputtering tests were carried out. (Activity 1) Characterization equipment was prepared for determining thin film physical properties, and the methodology for film property analysis was validated on the first test samples. (Activity 2) Initial selection of semiconductor microchip packaging strategies compatible with deep-UV radiation sensors has started. A market survey of available solutions for chip carriers and optical windows with UV-C transparency was conducted. Adaptation of the probe station for photoelectric measurements in the UV range for routine characterization at the partner’s facilities has been initiated. (Activity 4) More ...

RD ALFA Microelectronics Develops Advanced UV-C Photodetectors with Leading Research Partners
RD ALFA Microelectronics is proud to announce its role in the newly launched “GoFarUV” industrial research project, in collaboration with the Institute of Solid State Physics, University of Latvia (LU CFI), and AGL Technologies. Together, we are developing next-generation solar-blind UV-C photodetectors based on amorphous Aluminium Gallium Oxide (AlGaO) thin films. These novel detectors will be fabricated using high-rate magnetron sputtering and integrated into advanced optoelectronic packages by our engineering team. The detectors are designed for precise environmental and atmospheric monitoring, with additional applications in aerospace, defense, and security. This project strengthens RD ALFA’s position as a key contributor to Europe’s high-value space and photonics sectors. Our team leads the development of innovative chip packaging technologies, enabling sensing down to 200 nm wavelengths—essential for detecting ozone levels, wildfires, and UV radiation in harsh environments. Through GoFarUV, we aim to enhance Latvia’s export potential and contribute to European non-dependence in critical semiconductor technologies. The project is supported by the European Regional Development Fund (ERDF), with a total budget of 651,600 EUR. This effort reflects our long-term commitment to advanced R&D and collaboration between industry and academia. More ...

LEO Kompetences Centra pētījuma Nr. 1.6. īstenošanas progress, 30.06.2024.
A/S “RD ALFA MIKROELEKTRONIKAS DEPARTAMENTS” ir īstenojis pētījumu Nr. 1.6. “Zema sprieguma un zema trokšņu līmeņa vienpakāpju Rail-to-Rail operacionālā pastiprinātāja tehnoloģijas un mikroshēmas prototipa izpēte un izstrāde”. Pētījumu līdzfinansē Eiropas savienība. Pētījuma izpildes periods 01.02.2023. - 30.06.2024. More ...

LEO Kompetences Centra pētījuma Nr. 1.6. īstenošanas progress, 31.12.2023.
A/S “RD ALFA MIKROELEKTRONIKAS DEPARTAMENTS” veic pētījumu Nr. 1.6. “Zema sprieguma un zema trokšņu līmeņa vienpakāpju Rail-to-Rail operacionālā pastiprinātāja tehnoloģijas un mikroshēmas prototipa izpēte un izstrāde”. Pētījumu līdzfinansē Eiropas savienība. Pētījuma izpildes periods 01.02.2023. - 30.06.2024. More ...

LEO Kompetences Centra pētījuma Nr. 1.6. īstenošanas progress, 30.09.2023.
A/S “RD ALFA MIKROELEKTRONIKAS DEPARTAMENTS” veic pētījumu Nr. 1.6. “Zema sprieguma un zema trokšņu līmeņa vienpakāpju Rail-to-Rail operacionālā pastiprinātāja tehnoloģijas un mikroshēmas prototipa izpēte un izstrāde”. Pētījumu līdzfinansē Eiropas savienība. Pētījuma izpildes periods 01.02.2023. - 30.04.2024. More ...